High mobility III-V MOSFETs for RF and digital applications
- Passlack, M.
- Zurcher, P.
- Rajagopalan, K.
- Droopad, R.
- Abrokwah, J.
- Tutt, M.
- Park, Y-B
- Johnson, E.
- Hartin, O.
- Zlotnicka, A.
- Fejes, P.
- Hill, R.J.W.
- Moran, D.A.J.
- Li, X.
- Zhou, H.
- Macintyre, D.
- Thoms, S.
- Asenov, A.
- Kalna, K.
- Thayne, I.G.
Publication date
January 2007
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications
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