Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films
- Prokhorov, V.G. (author)
- Kaminsky, G.G. (author)
- Kim, J.M. (author)
- Eom, T.W. (author)
- Park, J.S. (author)
- Lee, Y.P. (author)
- Svetchnikov, V.L. (author)
- Levtchenko, G.G. (author)
- Nikolaenko, Y.M. (author)
- Khokhlov, V.A. (author)
Publication date
April 2011
DOI Publisher
AIP Publishing ISSN
1063-777X Citation count (estimate)
1Abstract
Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO3 (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60?000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.Applied Science
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