C-V profiling of ultra-shallow junctions using a buried layer with stepped doping

The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profile characterization of Si ultra shallow p+-n junctions. Stepped doping profile in the n region is designed for the accurate determination of xn0, a crucial parameter for the extraction of the doping profile in the p region. Medici simulations are carried out for the C-VR relationships of the p+-n and n-Schottky junctions with the same step-like n profile. The xn0 can be determined with an accuracy of 1.7 nm by a criteria developed in this work. And the doping profile in the p+ doped region can finally be extracted and shown to be in good agreement with the Medici simulation results.Electrical Engineering, Mathematics and Computer Scienc