Method for manufacturing a semiconductor device

The invention relates to a method for manufacturing a semiconductor device on a substrate provided with a silicon-oxide layer, by forming at least one hole in said silicon-oxide layer and depositing on said silicon-oxide layer an amorphous silicon-film which fills said at least one hole and covers a surrounding area of said hole, wherein said silicon-film is subjected to irradiation so as to convert at least the amorphous silicon in said at least one hole into a substantially recrystallized silicon by melting at least part of the silicon inside of the at least one hole and subsequently generating crystal growth inside said at least one hole, wherein the silicon inside the at least one hole is completely melted prior to generating said crystal growth, and wherein said crystal growth occurs through the generation at random of nuclei in said completely melted silicon by undercooling of said melted siliconElectrical Engineering, Mathematics and Computer Scienc