Add to ORKGThe task of this project is to investigate the reliability aspects of NXP 2T?FNFN?NOR embedded non?volatile memories (eNVM). The structure of the memory cell is presented and its principle of operations is described. The reliability aspects (mainly endurance & retention) of the floating gate memory cell are inspected. Methods are presented to extract important parameters related to this eNVM. A new influence (charge transport in the nitride) on VT instability is addressed.Microelectronics & Computer EngineeringElectrical Engineering, Mathematics and Computer Scienc
Charge storage nonvolatile memory (NVM) is one of the main driving forces in the evolution of IT han...
Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process ...
NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relativ...
This chapter aims at giving an overview of the most important reliability issues affecting the float...
The continuous demand for NAND flash memories with higher performance and storage capabilities pushe...
De nombreuses applications industrielles spécifiques dans les secteurs tels que l’automobile, le méd...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
Enclosed in this thesis work it can be found the results of a three years long re-search activity pe...
For more than 30 years, charge storage based non-volatile memory (NVM) devices such as floating gate...
We provide an experimental and theoretical investigation of the reliability properties of discrete-t...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
The nonvolatile memory market has been growing very fast during the last decade, especially for mobi...
International audienceThis paper addresses the reliability on a novel trench-based Triple Gate Trans...
This article illustrates the basic concepts underlying the operation of non-volatile memories (NVM)....
In this work, a concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low...
Charge storage nonvolatile memory (NVM) is one of the main driving forces in the evolution of IT han...
Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process ...
NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relativ...
This chapter aims at giving an overview of the most important reliability issues affecting the float...
The continuous demand for NAND flash memories with higher performance and storage capabilities pushe...
De nombreuses applications industrielles spécifiques dans les secteurs tels que l’automobile, le méd...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
Enclosed in this thesis work it can be found the results of a three years long re-search activity pe...
For more than 30 years, charge storage based non-volatile memory (NVM) devices such as floating gate...
We provide an experimental and theoretical investigation of the reliability properties of discrete-t...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
The nonvolatile memory market has been growing very fast during the last decade, especially for mobi...
International audienceThis paper addresses the reliability on a novel trench-based Triple Gate Trans...
This article illustrates the basic concepts underlying the operation of non-volatile memories (NVM)....
In this work, a concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low...
Charge storage nonvolatile memory (NVM) is one of the main driving forces in the evolution of IT han...
Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process ...
NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relativ...