Two-dimensional semiconductor quantum dots are studied in the filling-factor range 2<v<3. We find both theoretical and experimental evidence of a collective many-body phenomenon, where a fraction of the trapped electrons form an incompressible spin droplet on the highest occupied Landau level. The phenomenon occurs only when the number of electrons in the quantum dot is larger than ~30. We find the onset of the spin-droplet regime at v=5/2. This proposes a finite-geometry alternative to the Moore-Read-type Pfaffian state of the bulk two-dimensional electron gas. Hence, the spin-droplet formation may be related to the observed fragility of the v=5/2 quantum Hall state in narrow quantum point contacts.Kavli Institute of NanoScienceApplied Sci...
This thesis presents research that contributes to the understanding of fundamental properties of ele...
We use density-functional methods to study the effects of an external magnetic field on two-dimensio...
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vert...
Two-dimensional semiconductor quantum dots are studied in the filling-factor range 2<\u3bd<3. We fin...
A theory of electronic properties of a spin-singlet quantum Hall droplet at filling factor nu= 2 in ...
A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. I...
When a gas of electrons is confined to two dimensions, application of a strong magnetic field may le...
In this work, a quantum dot that is defined asymmetrically by electrostatic means induced on a GaAs/...
Theory of optical properties of interacting electrons and holes in quasi--2D quantum dots in strong ...
We present a theory and Coulomb and spin blockade spectroscopy experiments on quantum Hall droplets ...
Theory of optical properties of interacting electrons and holes in quasi--2D quantum dots in strong ...
In this article we discuss the ground state of a parabolically confined quantum dot in the limit of ...
Usually, semiconductor quantum dots represent a two-dimensional nanoscale system with few electrons ...
Quantum dots, also known as artificial atoms, are created by tightly confining electrons, and thereb...
We report on our investigation of the low- lying energy spectra and charge density of a two-dimensi...
This thesis presents research that contributes to the understanding of fundamental properties of ele...
We use density-functional methods to study the effects of an external magnetic field on two-dimensio...
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vert...
Two-dimensional semiconductor quantum dots are studied in the filling-factor range 2<\u3bd<3. We fin...
A theory of electronic properties of a spin-singlet quantum Hall droplet at filling factor nu= 2 in ...
A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. I...
When a gas of electrons is confined to two dimensions, application of a strong magnetic field may le...
In this work, a quantum dot that is defined asymmetrically by electrostatic means induced on a GaAs/...
Theory of optical properties of interacting electrons and holes in quasi--2D quantum dots in strong ...
We present a theory and Coulomb and spin blockade spectroscopy experiments on quantum Hall droplets ...
Theory of optical properties of interacting electrons and holes in quasi--2D quantum dots in strong ...
In this article we discuss the ground state of a parabolically confined quantum dot in the limit of ...
Usually, semiconductor quantum dots represent a two-dimensional nanoscale system with few electrons ...
Quantum dots, also known as artificial atoms, are created by tightly confining electrons, and thereb...
We report on our investigation of the low- lying energy spectra and charge density of a two-dimensi...
This thesis presents research that contributes to the understanding of fundamental properties of ele...
We use density-functional methods to study the effects of an external magnetic field on two-dimensio...
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vert...