For the past thirty years, microchips have doubled in complexity every two years. This increasing complexity required that the size of the structures written on silicon halve at the same rate. A fundamentally limiting factor to the size of microchip structures is the wavelength of the lithographic projection processes used in their manufacture. Consequently, the wavelengths used to produce microchips have shrunk from 436nm, at the boundary of the visible spectrum, to 193nm, in the ultraviolet, between 1975 and 2002. A next generation process aims to use light with a wavelength of 13nm, in what is called extreme ultraviolet lithography (EUVL). Unlike previous processes, which could use lens systems to project the required patterns onto the m...
Quality assurance for the production of optical components for extreme ultraviolet lithography (EUVL...
This report documents activities carried in support of the design and construction of an ultra-high ...
The design of a phase-shift interferometer in the extreme ultraviolet (EUV) is described. The interf...
For the past thirty years, microchips have doubled in complexity every two years. This increasing co...
Future generations of microchips will probably be produced using extreme ultraviolet light with a wa...
Future generations of microchips will probably be produced using extreme ultraviolet light with a wa...
EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical...
Extreme ultraviolet lithography (EUVL) is a candidate technology for the microelectronics industry w...
Aspheric mirrors for extreme ultraviolet lithography (EUVL) at a wavelength of 13nm require surface ...
Lithographic exposure equipment for integrated circuit manufacturing requires ever more accurate pos...
Lithographic exposure equipment for integrated circuit manufacturing requires ever more accurate pos...
Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conduc...
A previously reported interferometer without intermediate optics is used to perform measurements on ...
The ever-decreasing pattern size of structures in integrated circuits requires lithography processes...
Projection optical systems built for Extreme Ultraviolet Lithography (EUVL) demonstrated the ability...
Quality assurance for the production of optical components for extreme ultraviolet lithography (EUVL...
This report documents activities carried in support of the design and construction of an ultra-high ...
The design of a phase-shift interferometer in the extreme ultraviolet (EUV) is described. The interf...
For the past thirty years, microchips have doubled in complexity every two years. This increasing co...
Future generations of microchips will probably be produced using extreme ultraviolet light with a wa...
Future generations of microchips will probably be produced using extreme ultraviolet light with a wa...
EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical...
Extreme ultraviolet lithography (EUVL) is a candidate technology for the microelectronics industry w...
Aspheric mirrors for extreme ultraviolet lithography (EUVL) at a wavelength of 13nm require surface ...
Lithographic exposure equipment for integrated circuit manufacturing requires ever more accurate pos...
Lithographic exposure equipment for integrated circuit manufacturing requires ever more accurate pos...
Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conduc...
A previously reported interferometer without intermediate optics is used to perform measurements on ...
The ever-decreasing pattern size of structures in integrated circuits requires lithography processes...
Projection optical systems built for Extreme Ultraviolet Lithography (EUVL) demonstrated the ability...
Quality assurance for the production of optical components for extreme ultraviolet lithography (EUVL...
This report documents activities carried in support of the design and construction of an ultra-high ...
The design of a phase-shift interferometer in the extreme ultraviolet (EUV) is described. The interf...