Growth and characterisation of high quality MBE grown InNxSb1-x

The growth, structural and optical characterisation of dilute nitride allows of InSb grown by plasma-assisted molecular beam epitaxy is presented. The lawyers were characterised by high-resolution X-ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier-transform infrared absorption measurement reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss-Burstein band filling. The bandgap of InNSb as a function of nitrogen incorporation (using a 5-band k . p Hamiltonian and parameters from tight binding calculations) highlighting the applicability of the material in exploiting the atmospheric transmission window [S.D. Lord, NASA Technical Memorandum (1992) 103957] for long wavelength applications. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim