The Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas of holes in quantum wells consisting of pure germanium and silicon with low germanium content (13%) are analyzed to determine the effective masses and the g factor in these regions. The magnetic-field dependences of the resistivity rho(xx) obtained at temperatures from 33 mK to 4 K in magnetic fields up to I I T are used for the analysis. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3075945
The magnetic-field dependence (up to 110 kOe) of the resistance of Si0.7Ge0.3/Si0.2Ge0.8/Si0.7Ge0.3 ...
We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling ...
Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to de...
The Shubnikov-de Haas oscillations in a two-dimensional hole gas in a quantum well of pure germanium...
A new method of investigating the quantum channel surface was used to study the germanium quantum we...
Changes in the conductivity of p-type quantum-well heterostructures of Si(0.05)Ge(0.95) alloy are st...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
The weak localization and interaction effects for charge carriers in a two-dimensional hole gas in a...
The magnetoresistance (MR) of a two-dimensional hole gas in a quantum well of compressively strained...
The work described in this thesis involves magnetotransport measurements performed on n-channel Si0....
The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-do...
The magnetic-field dependence (up to 110 kOe) of the resistance of Si0.7Ge0.3/Si0.2Ge0.8/Si0.7Ge0.3 ...
We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling ...
Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to de...
The Shubnikov-de Haas oscillations in a two-dimensional hole gas in a quantum well of pure germanium...
A new method of investigating the quantum channel surface was used to study the germanium quantum we...
Changes in the conductivity of p-type quantum-well heterostructures of Si(0.05)Ge(0.95) alloy are st...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
Shubnikov-de Haas measurements have been performed on a high-mobility AlxGa1-xAs/GaAs heterostructur...
The weak localization and interaction effects for charge carriers in a two-dimensional hole gas in a...
The magnetoresistance (MR) of a two-dimensional hole gas in a quantum well of compressively strained...
The work described in this thesis involves magnetotransport measurements performed on n-channel Si0....
The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-do...
The magnetic-field dependence (up to 110 kOe) of the resistance of Si0.7Ge0.3/Si0.2Ge0.8/Si0.7Ge0.3 ...
We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling ...
Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to de...