Add to ORKGSamples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing
Abstract. Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Depos...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
Different diffusion barrier layers applied on the boron-doped surfaces of silicon wafers with sawdam...
Oxidat ion-enhanced diffusion (OED) of boron and phosphorus has been found to vary with oxidation ra...
In this paper a novel method is presented, based on the use of plasma processing, to suppress the tr...
In this paper a novel method is presented, based on the use of plasma processing, to suppress the tr...
Hot-pressed 93 % boron nitride wafers when properly oxidized and used as an in situ boron dopant in ...
An experimental study investigates the oxidation-enhanced diffusion of phosphorus in silicon in both...
Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(...
Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(...
An experimental study investigates the oxidation-enhanced diffusion of phosphorus in silicon in both...
A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor d...
Abstract. Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Depos...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
Different diffusion barrier layers applied on the boron-doped surfaces of silicon wafers with sawdam...
Oxidat ion-enhanced diffusion (OED) of boron and phosphorus has been found to vary with oxidation ra...
In this paper a novel method is presented, based on the use of plasma processing, to suppress the tr...
In this paper a novel method is presented, based on the use of plasma processing, to suppress the tr...
Hot-pressed 93 % boron nitride wafers when properly oxidized and used as an in situ boron dopant in ...
An experimental study investigates the oxidation-enhanced diffusion of phosphorus in silicon in both...
Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(...
Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(...
An experimental study investigates the oxidation-enhanced diffusion of phosphorus in silicon in both...
A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor d...
Abstract. Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Depos...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...