Previous publications have proposed the use of reconstruction as a method of quantification of SIMS depth profiles, taking the convolution integral as an approximate model for the measurement process in the dilute limit. We present here a demonstration of the maximum entropy (MaxEnt) reconstruction method for SIMS depth profile quantification at a number of primary ion energies. Neither implanted standard nor crater depth measurement are required by the technique, although both are used here as comparisons. The erosion rate calculated directly from the delta layer is found to be equivalent to that from crater depth measurement to within experimental accuracy. It is demonstrated that the MaxEnt reconstruction method can quantify a delta laye...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
A method which allows the erosion rate to be established from the earliest stages of an ultralow ene...
We present an analytic form for the response function measured in a SIMS depth profile of an impurit...
The action Of the Probe ions in SIMS depth profiling causes a number of mass transport phenomena. Co...
Depth profiling using secondary ion mass spectrometry (SIMS) provides profiles of high sensitivity a...
Semiconductor layer structures with sharply changing concentration, and more especially delta-doped ...
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribut...
We describe a new method for extracting the secondary-ion-mass spectroscopy response function from m...
The knowledge of the depth concentration profile of thin-layered Surfaces a few nanometers thick is ...
The knowledge of the depth concentration profile of thin-layered Surfaces a few nanometers thick is ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
SIMS response functions and depth resolution parameters have been measured using O2+ primary ions at...
We discuss the factors affecting estimates of the true depth of sharp features such as delta layers ...
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth pr...
A method which allows the erosion rate to be established from the earliest stages of an ultralow ene...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
A method which allows the erosion rate to be established from the earliest stages of an ultralow ene...
We present an analytic form for the response function measured in a SIMS depth profile of an impurit...
The action Of the Probe ions in SIMS depth profiling causes a number of mass transport phenomena. Co...
Depth profiling using secondary ion mass spectrometry (SIMS) provides profiles of high sensitivity a...
Semiconductor layer structures with sharply changing concentration, and more especially delta-doped ...
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribut...
We describe a new method for extracting the secondary-ion-mass spectroscopy response function from m...
The knowledge of the depth concentration profile of thin-layered Surfaces a few nanometers thick is ...
The knowledge of the depth concentration profile of thin-layered Surfaces a few nanometers thick is ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
SIMS response functions and depth resolution parameters have been measured using O2+ primary ions at...
We discuss the factors affecting estimates of the true depth of sharp features such as delta layers ...
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth pr...
A method which allows the erosion rate to be established from the earliest stages of an ultralow ene...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
A method which allows the erosion rate to be established from the earliest stages of an ultralow ene...
We present an analytic form for the response function measured in a SIMS depth profile of an impurit...