Depth profiling using secondary ion mass spectrometry (SIMS) provides profiles of high sensitivity and depth resolution. To obtain the greatest depth resolution, low energy probes must be employed to minimize the redistribution of the sample. However, there is a lower limit beyond which further reduction in energy causes a decrease in ion and sputter yields to a point where sensitive SIMS is no longer possible. Also, with most ion guns, a reduction in energy brings a dramatic loss of current leading to unrealistically long analysis times. To overcome these problems a deconvolution method may be employed to extract the maximum amount of information from data acquired at a higher energy. In this article we experimentally investigate the exten...
The ability of five Secondary Ion Mass Spectrometry (SIMS) instruments to resolve thin layer and mod...
This article describes the shape of secondary ion mass spectrometry (SIMS) depth profiles from ultra...
In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectr...
The action Of the Probe ions in SIMS depth profiling causes a number of mass transport phenomena. Co...
Previous publications have proposed the use of reconstruction as a method of quantification of SIMS ...
We describe a new method for extracting the secondary-ion-mass spectroscopy response function from m...
Semiconductor layer structures with sharply changing concentration, and more especially delta-doped ...
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown t...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
The use of sub-keV primary ion beams for SIMS depth profiling is growing rapidly, especially in the ...
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribut...
In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysi...
Multiresolution deconvolution (MD), based on Tikhonov-Miller regularization and wavelet transformati...
International audienceIn this paper, we describe the improvement of secondary ion mass spectrometry ...
The ability of five Secondary Ion Mass Spectrometry (SIMS) instruments to resolve thin layer and mod...
This article describes the shape of secondary ion mass spectrometry (SIMS) depth profiles from ultra...
In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectr...
The action Of the Probe ions in SIMS depth profiling causes a number of mass transport phenomena. Co...
Previous publications have proposed the use of reconstruction as a method of quantification of SIMS ...
We describe a new method for extracting the secondary-ion-mass spectroscopy response function from m...
Semiconductor layer structures with sharply changing concentration, and more especially delta-doped ...
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown t...
Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams ...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
The use of sub-keV primary ion beams for SIMS depth profiling is growing rapidly, especially in the ...
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribut...
In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysi...
Multiresolution deconvolution (MD), based on Tikhonov-Miller regularization and wavelet transformati...
International audienceIn this paper, we describe the improvement of secondary ion mass spectrometry ...
The ability of five Secondary Ion Mass Spectrometry (SIMS) instruments to resolve thin layer and mod...
This article describes the shape of secondary ion mass spectrometry (SIMS) depth profiles from ultra...
In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectr...