Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions are used to measure the effective mass of Composite Fermions (CF). The CF effective mass is found to increase approximately linearly with the effective field B* up to effective fields of 14 T. Data from all fractions around nu = 1/2 are unified by the single parameter B* for samples studied over a wide range of temperature. The energy gap is found to increase as root B* at high fields. Hydrostatic pressure is used to reduce the value of the electron g-factor, and this is shown to have a large effect on the relative strengths of different fractions. By 13.4 kbar, where the Zeeman energy is only 1/4 of its value at 0 bar, fractions with odd nume...
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of comp...
The band structure and transport properties of the technologically important materials GaAs and InP ...
An attempt is made to study the effective electron mass at the Fermi level in semi-conductor superla...
Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions a...
Effective masses derived from the low-field Shubnikov-de Haas oscillations in high mobility GaAs/AlG...
Effective masses derived from the low-field Shubnikov-de Haas oscillations in high mobility GaAs/AlG...
The authors report on the recent growth by MOCVD of 2.0 {times} 106 cm2/Vs mobility heterostructures...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
We have measured the magnetoresistance of a variety of structures to search for effects associated w...
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of comp...
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of comp...
The band structure and transport properties of the technologically important materials GaAs and InP ...
An attempt is made to study the effective electron mass at the Fermi level in semi-conductor superla...
Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions a...
Effective masses derived from the low-field Shubnikov-de Haas oscillations in high mobility GaAs/AlG...
Effective masses derived from the low-field Shubnikov-de Haas oscillations in high mobility GaAs/AlG...
The authors report on the recent growth by MOCVD of 2.0 {times} 106 cm2/Vs mobility heterostructures...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
Recent theoretical and experimental work demonstrates that a two-dimensional electron gas at Landau-...
We have measured the magnetoresistance of a variety of structures to search for effects associated w...
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of comp...
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of comp...
The band structure and transport properties of the technologically important materials GaAs and InP ...
An attempt is made to study the effective electron mass at the Fermi level in semi-conductor superla...