Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction

The temperature (from 1.5 to 2 K) and magnetic field (up to 4.5 T) dependences of conductivity and Hall's emf have been studied in delta[Sb]-layers of Si with a different Hall's concentration of charge carriers. It is shown that these dependences can be described to a high degree of accuracy by the quantum corrections to Conductivity associated with effects of weak localization of electron and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time and the parameter lambda(D) of electron-electron interaction have been determined. It is found that decreasing concentration of electron in a delta-layer involves a decrease in lambda(D) that may be explained by the peculiarities of screening processes in a two-dimensional electronic system