Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors

A review of some important parameters relating to the performance of pseudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is given. The problems of Ge matrix element and B and Sb dopant segregation, in growing suitable layer structures to optimise device performance, are discussed and some appropriate growth strategies are indicated. (C) 1997 Elsevier Science S.A