As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin gets sharply eroded because of continuous lowering of device threshold voltage together with ever increasing rate of signal transitions driven by the consistent demand for higher performance. Sharp erosion of device noise margin vastly increases the likelihood of intermittent failures (also known as parametric failures) during device operation as opposed to permanent failures caused by physical defects introduced during manufacturing process. The major sources of intermittent failures are capacitive crosstalk between neighbor interconnects, abnormal drop in power supply voltage (also known as droop), localized thermal gradient, and soft errors ...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
Advancing nanometer technology scaling enables higher integration on a single chip with minimal feat...
∗Signatures are on file in the Graduate School. Aggressive downscaling of transistor sizes for incre...
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin ge...
The continued device scaling trend and the aggressive integrated circuit design style have shifted t...
Circuits using nano-meter technologies are becoming increasingly vulnerable to signal interference f...
This paper analyzes signal distortion caused by nanometer-scale solder ball fractures. A solder ball...
.In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects...
As CMOS technology advances to the nanometer scale, semiconductor industry is enjoying the ever-incr...
In current technologies (65nm and beyond), functional failures caused by shorts, opens, and stuck-at...
In advanced CMOS technologies, microscopic defects localized at the Si interface (Nit) or within the...
<p>Timing-related defects are becoming increasingly important in nanometer-technology integrated cir...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
This book introduces new techniques for detecting and diagnosing small-delay defects (SDD) in integr...
Signal integrity analysis is one of the crucial analysis steps in designing a high performance micro...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
Advancing nanometer technology scaling enables higher integration on a single chip with minimal feat...
∗Signatures are on file in the Graduate School. Aggressive downscaling of transistor sizes for incre...
As we move deep into nanometer regime of CMOS VLSI (45nm node and below), the device noise margin ge...
The continued device scaling trend and the aggressive integrated circuit design style have shifted t...
Circuits using nano-meter technologies are becoming increasingly vulnerable to signal interference f...
This paper analyzes signal distortion caused by nanometer-scale solder ball fractures. A solder ball...
.In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects...
As CMOS technology advances to the nanometer scale, semiconductor industry is enjoying the ever-incr...
In current technologies (65nm and beyond), functional failures caused by shorts, opens, and stuck-at...
In advanced CMOS technologies, microscopic defects localized at the Si interface (Nit) or within the...
<p>Timing-related defects are becoming increasingly important in nanometer-technology integrated cir...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
This book introduces new techniques for detecting and diagnosing small-delay defects (SDD) in integr...
Signal integrity analysis is one of the crucial analysis steps in designing a high performance micro...
As CMOS scaling moves towards the end of technology road map, a plethora of reliability issues are e...
Advancing nanometer technology scaling enables higher integration on a single chip with minimal feat...
∗Signatures are on file in the Graduate School. Aggressive downscaling of transistor sizes for incre...