Stimulated emission, lasing, and related properties of III-V nitride heterostructures are studied. A strain-dependent semi-empirical tight-binding model is developed, using the valence force-field model of Keating, to predict the atomic positions in the strained wurtzite crystal lattice. Predicted deformation potentials and strain-induced exciton splitting are shown to closely match data in the literature. The spectral properties of the edge luminescence from GaN-AlGaN heterostructures is investigated. The existence of stimulated emission is demonstrated and a measurement of the optical gain spectra is reported. In addition, the light emission properties of GaN-AlGaN separate confinement heterostructures is studied. The measured luminescenc...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of inte...
the wells, and observing a resonant phenomenon from an undoped GaN/Al sub x Ga sub 1 sub - sub x N s...
Stimulated emission, lasing, and related properties of III-V nitride heterostructures are studied. A...
The scope of this thesis is the epitaxy of group-III nitride heterostructures on (0001) sapphire sub...
The scope of this thesis is the epitaxy of group-III nitride heterostructures on (0001) sapphire sub...
The intention of this work is to discuss and report on our research on nonpolar laser structures gro...
Devices based on III-nitride compound semiconductors have been rapidly and successfully developed in...
Group III-nitrides have been considered a promising system for semiconductor devices since a few dec...
In this thesis, we deal with the InGaAs/GaAs quantum dots and InGaN/GaN quantum systems. Both of the...
International audienceWe demonstrate a double heterostructure (DH) nitride laser diode (LD) with an ...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
dissertationGallium nitride (GaN) is an increasingly important semiconductor material showing promis...
Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...
This doctoral thesis presents a study of photoluminescence efficiency in wide-band-gap III-nitride s...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of inte...
the wells, and observing a resonant phenomenon from an undoped GaN/Al sub x Ga sub 1 sub - sub x N s...
Stimulated emission, lasing, and related properties of III-V nitride heterostructures are studied. A...
The scope of this thesis is the epitaxy of group-III nitride heterostructures on (0001) sapphire sub...
The scope of this thesis is the epitaxy of group-III nitride heterostructures on (0001) sapphire sub...
The intention of this work is to discuss and report on our research on nonpolar laser structures gro...
Devices based on III-nitride compound semiconductors have been rapidly and successfully developed in...
Group III-nitrides have been considered a promising system for semiconductor devices since a few dec...
In this thesis, we deal with the InGaAs/GaAs quantum dots and InGaN/GaN quantum systems. Both of the...
International audienceWe demonstrate a double heterostructure (DH) nitride laser diode (LD) with an ...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
dissertationGallium nitride (GaN) is an increasingly important semiconductor material showing promis...
Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...
This doctoral thesis presents a study of photoluminescence efficiency in wide-band-gap III-nitride s...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of inte...
the wells, and observing a resonant phenomenon from an undoped GaN/Al sub x Ga sub 1 sub - sub x N s...