Add to ORKGCharge-carrier scattering in pseudomorphic p-channel Si/SiGe/Si heterostructures is reviewed. It is argued that current room-temperature field-effect device performance is limited by materials quality, particularly interface roughness and compositional inhomogeneity, rather than random alloy scattering. The way ahead is discussed. (C) 2000 Elsevier Science S.A. All rights reserved
Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacita...
III-V\u27s are currently gaining a lot of attraction as possible MOSFET channel materials due to the...
This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Ge...
A variety of electrical measurements on the Si/Si1-xGex/Si heterostructure are surveyed. From these ...
The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 str...
The room-temperature effective mobilities of pseudomorphic Si/Si 0.64 Ge 0.36/Si p-metal-oxide-semic...
High speed p MOS devices are now in prospect which take advantage of strain induced modifications of...
We report a theoretical study of the hole density and the low-field mobility in modulation p-doped r...
A study of several Si0.8Ge0.2 p-channel heterostructures with self-aligned poly-Si metal-oxide-semic...
For devices beyond the 14nm node, it is important to investigate performance boosters such as high m...
A review of some important parameters relating to the performance of pseudomorphic Si/SiGe/Si p-chan...
Silicon based CMOS technology has seen continuous scaling of device dimensions for past three decade...
The alloy scattering potential is an important parameter in SiGe alloys since it not only affects th...
Si-SiGe heterostructures offer realistic prospects for field effect transistors of enhanced performa...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacita...
III-V\u27s are currently gaining a lot of attraction as possible MOSFET channel materials due to the...
This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Ge...
A variety of electrical measurements on the Si/Si1-xGex/Si heterostructure are surveyed. From these ...
The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 str...
The room-temperature effective mobilities of pseudomorphic Si/Si 0.64 Ge 0.36/Si p-metal-oxide-semic...
High speed p MOS devices are now in prospect which take advantage of strain induced modifications of...
We report a theoretical study of the hole density and the low-field mobility in modulation p-doped r...
A study of several Si0.8Ge0.2 p-channel heterostructures with self-aligned poly-Si metal-oxide-semic...
For devices beyond the 14nm node, it is important to investigate performance boosters such as high m...
A review of some important parameters relating to the performance of pseudomorphic Si/SiGe/Si p-chan...
Silicon based CMOS technology has seen continuous scaling of device dimensions for past three decade...
The alloy scattering potential is an important parameter in SiGe alloys since it not only affects th...
Si-SiGe heterostructures offer realistic prospects for field effect transistors of enhanced performa...
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconduct...
Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacita...
III-V\u27s are currently gaining a lot of attraction as possible MOSFET channel materials due to the...
This study examines the susceptibility of hot carrier effects on various Heterostructures Silicon Ge...