Quantum interference effects in p-Si1-x Ge (x) quantum wells

Quantum interference effects, such as weak localization and electron-electron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1-x Ge (x) quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field