Modeling of MOS-Side carrier injection in trench-gate IGBTs
- Lu, Liqing
- Chen, Zhiyang
- Bryant, Angus T.
- Hudgins, Jerry L.
- Palmer, Patrick R.
- Santi, Enrico
Publication date
March 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0093-9994Abstract
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms
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