We present the results of an experimental and atomistic modelling investigation of the Sili- con/Silver (Si/Ag) interfaces found in industrial solar cells. We use small ab initio calculations to parameterize a new interatomic potential for the Si/Ag interaction. This interatomic potential is then validated against larger ab initio calculations as well as the results of previous experimental and theoretical studies of Si/Ag systems. The interatomic potential allows us to perform a large- scale search of the conformational space of Si/Ag interfaces identified from transmission electron microscopy (TEM) studies. The most favourable geometries thus identified are then used as the input for more accurate ab initio calculations. We demonstrate th...
The article reviews recent experimental and theoretical work on the electronic properties of transit...
The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was ...
Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. On...
We present the results of an experimental and atomistic modelling investigation of the Sili- con/Sil...
AbstractWe present results from a study of the nanostructure of silver thick film contact interfaces...
Screen-printing technique is used since 1970’s, but the understanding of screen printed contacts is ...
We present results from a study of the nanostructure of silver thick film contact interfaces on n-ty...
AbstractFormation of electrical contacts by printing silver (Ag) paste on silicon (Si) solar cells a...
As screen printed contacts are the predominant metallisation technique in industrial production of S...
As screen printed contacts are the predominant metallisation technique in industrial production of S...
Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides ...
Commercial multicrystalline silicon (me-Si) solar cells use screen-printing process for depositing b...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.Cataloged from PD...
Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides ...
Internal interfaces in materials play an important role in the performance of many devices used in e...
The article reviews recent experimental and theoretical work on the electronic properties of transit...
The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was ...
Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. On...
We present the results of an experimental and atomistic modelling investigation of the Sili- con/Sil...
AbstractWe present results from a study of the nanostructure of silver thick film contact interfaces...
Screen-printing technique is used since 1970’s, but the understanding of screen printed contacts is ...
We present results from a study of the nanostructure of silver thick film contact interfaces on n-ty...
AbstractFormation of electrical contacts by printing silver (Ag) paste on silicon (Si) solar cells a...
As screen printed contacts are the predominant metallisation technique in industrial production of S...
As screen printed contacts are the predominant metallisation technique in industrial production of S...
Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides ...
Commercial multicrystalline silicon (me-Si) solar cells use screen-printing process for depositing b...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.Cataloged from PD...
Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides ...
Internal interfaces in materials play an important role in the performance of many devices used in e...
The article reviews recent experimental and theoretical work on the electronic properties of transit...
The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was ...
Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. On...