[[alternative]]Raman Spectroscopic and PL study of Wurtzite Structure Semiconductor

[[abstract]]We get two InN samples from Cornell university and measure their optics characteristic.On the other hand, we study the GaN nanowires and ZnO nanorods, which be able to learn crack these energy bandgap in 3.2eV to 3.4eV from information at document, lie in ultraviolet ray range, one that is with InN be able to crack, 0.7eV- 0.8eV, lying in the infrared light district to happen it is two extremes, therefor we compared its optics nature characteristic. In this thesis, we are prior to examine the photoluminescence of the three kinds of semiconductors to be able to know the energy bandgap, than use different wavelength laser for excitation source to measure the room temperature Ramon scattering spectrum, the laser light sources used are 325nm (He-Cd laser ), 442nm (He-Cd laser ), 488nm, 514nm (Ar-ion laser ), 633nm (He-Ne laser ) and 785nm (solid-state laser ), respectively, to investigate the A1(LO) phonon mode of Raman spectra. We observed that the A1(LO) phonon mode was shifted to their energy bandgap. Wu consider this effect cause with defect and impurity.