[[alternative]]Synthesis of High-Purity and -Quality Gallium Nitride Nanowires

[[abstract]]Though vapor-liquid-solid (VLS) mechanism, we have successfully produced high-purity and -quality gallium nitride nanowires. It is shows using scanning electron microscopy (SEM) that the diameter of resulting nanowires range from 10 to 50 nm with length of several micrometers. Furthermore, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) have been applied to identify the crystal structure of the individual gallium nitride nanowire. The results revealed that most of them are single crystalline wurtzite phase with a growing direction of [110]. Photoluminescence spectra also showed a strong band-edge emission of wurtzite gallium nitride crystal at 3.38eV. In the field emission studies, it has a potential application on low turn-on field of gallium nitride nanowires. Through the way of producing high-purity and -quality gallium nitride nanowires, we have investigated their fundamental properties as well as their potential in optoelectronic devices.