Capacitance-voltage (C-V) measurement and analysis is highly useful for determining important information about MOS gate stacks. Parameters such as the equivalent oxide thickness (EOT), substrate doping density, flatband voltage, fixed oxide charge, density of interface traps (Dit), and effective gate work function can all be extracted from experimental C-V curves. However, to extract these gate-stack parameters accurately, the correct models must be utilized. In Part I, we described the modeling and implementation of a C-V code that can be used for alternative channel semiconductors in conjunction with high-k gate dielectrics and metal gates. Importantly, this new code (CV ACE) includes the effects of nonparabolic bands and quantum capacit...
Abstract—A quantum–mechanical (QM) model is presented for accumulation gate capacitance of MOS struc...
[[abstract]]Simple quantitative models of charge displacement due to the quantum effect and its infl...
In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks...
Capacitance-voltage (C-V) measurement and analysis is highly useful for determining important inform...
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS ...
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS ...
International audienceWe present a one-dimensional simulation study of the capacitance-voltage (C-V)...
International audienceWe present a one-dimensional simulation study of the capacitance-voltage (C-V)...
In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) me...
Abstract:- High-k dielectric materials are being considered as replacement for SiO2 as the gate diel...
Abstract—Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well M...
7th Symposium on SiO(2), Advanced Dielectriece and Related Devices, St Etienne, FRANCE, JUN 30-JUL 0...
Abstract—Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well M...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance...
Abstract—A quantum–mechanical (QM) model is presented for accumulation gate capacitance of MOS struc...
[[abstract]]Simple quantitative models of charge displacement due to the quantum effect and its infl...
In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks...
Capacitance-voltage (C-V) measurement and analysis is highly useful for determining important inform...
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS ...
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS ...
International audienceWe present a one-dimensional simulation study of the capacitance-voltage (C-V)...
International audienceWe present a one-dimensional simulation study of the capacitance-voltage (C-V)...
In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) me...
Abstract:- High-k dielectric materials are being considered as replacement for SiO2 as the gate diel...
Abstract—Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well M...
7th Symposium on SiO(2), Advanced Dielectriece and Related Devices, St Etienne, FRANCE, JUN 30-JUL 0...
Abstract—Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well M...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance...
Abstract—A quantum–mechanical (QM) model is presented for accumulation gate capacitance of MOS struc...
[[abstract]]Simple quantitative models of charge displacement due to the quantum effect and its infl...
In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks...