Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, whi...
Localized surface plasmon (LSP) coupling with many radiators are investigated. The LSP is generated ...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
We studied the practicable alleviation of efficiency droop effect in GaN-based light emitting diodes...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We have studied the effect of surface plasmon (SP) coupling to enhance emission efficiency of light ...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGa...
Abstract—We demonstrate the numerical study results of the enhancements of internal quantum efficien...
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devi...
We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-pl...
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface p...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs...
Localized surface plasmon (LSP) coupling with many radiators are investigated. The LSP is generated ...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
We studied the practicable alleviation of efficiency droop effect in GaN-based light emitting diodes...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We have studied the effect of surface plasmon (SP) coupling to enhance emission efficiency of light ...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGa...
Abstract—We demonstrate the numerical study results of the enhancements of internal quantum efficien...
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devi...
We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-pl...
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface p...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs...
Localized surface plasmon (LSP) coupling with many radiators are investigated. The LSP is generated ...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...