N2+ bombardment of Al2O3 has been investigated by near edge x-ray absorption fine structure spectroscopy. Two kinds of species were detected and were attributed to implanted nitrogen atoms and nitride species. These results are discussed in relation to previous attributions in the literature of these species to AlNO and AlN.Comisión Interministerial de Ciencia y Tecnología (CICYT) MAT97-068
AbstractX-ray absorption (XAS) and X-ray emission spectroscopy (XES) provide element specific probes...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0....
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconducto...
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of ...
Formation of defects in hexagonal and cubic boron nitride (h -BN and c -BN, respectively) under low-...
We have studied the formation of nitrogen-related defects created in compound semiconductors by low-...
The work presents a systematic study of energetic N2+ ion interaction with the clean Al2O3 surface a...
The work presents a systematic study of energetic N-2(+) ion interaction with the clean Al2O3 surfac...
©2015 American Physical Society. X-ray absorption near-edge spectroscopy, photoluminescence, cathodo...
We investigated different AlN nano-systems using spectroscopic methods. Experiments were performed a...
Interaction of low-energy nitrogen ions with ZnO surface has been studied by photoemission spectrosc...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
Absolute K-shell photoionization cross sections for atomic nitrogen have been obtained from both exp...
The determination of the local structure of dopants in semiconductors is of paramount importance to ...
AbstractX-ray absorption (XAS) and X-ray emission spectroscopy (XES) provide element specific probes...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0....
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconducto...
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of ...
Formation of defects in hexagonal and cubic boron nitride (h -BN and c -BN, respectively) under low-...
We have studied the formation of nitrogen-related defects created in compound semiconductors by low-...
The work presents a systematic study of energetic N2+ ion interaction with the clean Al2O3 surface a...
The work presents a systematic study of energetic N-2(+) ion interaction with the clean Al2O3 surfac...
©2015 American Physical Society. X-ray absorption near-edge spectroscopy, photoluminescence, cathodo...
We investigated different AlN nano-systems using spectroscopic methods. Experiments were performed a...
Interaction of low-energy nitrogen ions with ZnO surface has been studied by photoemission spectrosc...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
Absolute K-shell photoionization cross sections for atomic nitrogen have been obtained from both exp...
The determination of the local structure of dopants in semiconductors is of paramount importance to ...
AbstractX-ray absorption (XAS) and X-ray emission spectroscopy (XES) provide element specific probes...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0....