Add to ORKGThe main purpose of this paper is to investigate the influence of the mutual inductance between the memristors of a memory matrix and of the memristor parasitic parameters on their characteristics at impulse mode. The values of the parasitic capacitance and inductance of a memristor are calculated. In the experiments three possible values of the coefficient of magnetic connection between elements are used. The equivalent memristor circuit is analysed in MATLAB environment. The basic effects from the analysis are given. The main result is that the parasitic parameters do not strongly affect the memristor voltage drops at frequencies up to 2 GHz
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The so...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
As two-terminal passive fundamental circuit elements with memory characteristics, memristors are pro...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
A memristor is a newly found fundamental circuit element whose behavior can be predicted using eithe...
In this paper the main goal is to study the principle structure and characteristics of single and mu...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The so...
Till date the circuitry world has known three fundamental circuit elements--capacitor, resistor and ...
Circuit or electronic components are useful elements allowing the realization of different circuit f...
poster abstractThe memristor, postulated in the 1970’s, was recently realized in a tita-nium dioxide...
The three basic circuit elements for building an electronic device are the resistors, the capacitors...
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The so...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
As two-terminal passive fundamental circuit elements with memory characteristics, memristors are pro...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
A memristor is a newly found fundamental circuit element whose behavior can be predicted using eithe...
In this paper the main goal is to study the principle structure and characteristics of single and mu...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The so...
Till date the circuitry world has known three fundamental circuit elements--capacitor, resistor and ...
Circuit or electronic components are useful elements allowing the realization of different circuit f...
poster abstractThe memristor, postulated in the 1970’s, was recently realized in a tita-nium dioxide...
The three basic circuit elements for building an electronic device are the resistors, the capacitors...
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The so...