Study on IGZO Thin Film Transistors with Finlike Channels Fabricated by Nanoimprint Lithography

[[abstract]]摘要 本論文分為兩大部分，第一部分為單通道薄膜元件實驗，第二部分為擁有類鰭狀結構的多通道元件實驗。 實驗結果顯示，第一批次的單通道元件在氧流量5%時擁有較高的載子遷移率以及較小的次臨界擺幅，TLM量測則指出氧流量5%的元件擁有較低的薄膜片電阻。第二批次的元件則是在氧流量0%，退火溫度280度時擁有較佳的特性，並且發現退火溫度較高會改善元件的次臨界擺幅。最後觀察到類鰭狀結構的多通道元件皆比單通道元件擁有較大的電流以及載子遷移率。[[abstract]]Abstract The research can divided by two parts, the first part is the experiment of sputtering, and the second one is about the nanoimprint lithography. As the result of first sputter deposition, the IGZO shows better performance in oxygen flow 5%, higher mobility and lower sub-threshold swing. Therefore, the measurement result of TLM (Transfer Length Method) indicated that IGZO had lower sheet resistance in oxygen flow 5%. Furthermore, when the thin film (IGZO) was resputter, the device with IGZO in oxygen flow 0%, post-annealed at 280℃, shows better pergormance. In otherwords, the device anneal at higher temperature, shows characteristic, such as sub-threshold swing. With finlike channel structure, the characteristics of IGZO TFTs, such as drain current and mobility can be improved, comparing to the conventional one. This approach may be suitable for the future display applications.[[note]]碩