Study of Millimeter-Wave CMOS Voltage-Controlled Oscillator and Frequency Divider

[[abstract]]本論文使用台積電90奈米CMOS製程元件設計與實現壓控振盪器及注入鎖定除頻器以作為在W頻帶及G頻帶的無線通訊系統之應用。此論文的研究主題分成四部分： 第一部分是一個以90奈米製程實現雙頻帶壓控振盪器，加入LC源級退化及四分之一波長傳輸線雙推式架構使電路操作在W頻帶及G頻帶。 第二部分為使用90奈米製程實現應用在94 GHz的壓控振盪器。使用具提升增益之倍頻器，達到較大的輸出振幅、減少消耗功率及雙頻帶操作。採用兩級的LC振盪器以達到更高的操作頻率。 第三部分是一個以90奈米製程實現應用在94 GHz的除三注入鎖定除頻器。使用疊接式NMOS交叉耦合對降低消耗功率，在輸入訊號端加上平衡不平衡轉換器以方便量測。 第四部份沿用第三部分之電路使用疊接式NMOS交叉耦合對降低消耗功率，不同的是加入尾端電晶體作為三倍頻訊號的輸入端，完成一個具8.5GHz寬鎖頻範圍的94 GHz除三注入鎖定除頻器。[[abstract]]The design and implement of voltage-controlled oscillator (VCO) and injection-locked frequency divider (ILFD) is purposed for W-band and G-band in this paper. The thesis can be divided into four parts： In the first part, a dual-band voltage-controlled oscillator is implemented in 90 nm CMOS technology. The circuit operates in W-band and G-band using LC-source degeneration and quarter-wavelength transmission line of push-push structure. In the second part, the VCO is implemented for 94 GHz applications in 90 nm CMOS technology. The gain-enhanced frequency doubler is added to achieve greater output swing, reduce power consumption and operate in dual-band. To achieve higher operating frequencies, distributed LC-Tank architecture is employed. In the third part, a divide-by-3 injection-locked frequency divider is implemented for 94 GHz in 90 nm CMOS technology. The circuit saves the power consumption by using stacked NMOS cross-coupled pair. In order to facilitate measurement, the Marchand Balun is added. The last part follows the circuit of third part which uses the stacked NMOS cross-coupled pair to save the power consumption. The different portion of the circuit is the signal injected by the tail NMOS transistor. The 94 GHz divide-by-3 injection-locked frequency divider has 8.5GHz wide-locking range is designed.[[note]]碩