The Study on ZnO and IGZO Double Layer Thin Film Transistors

[[abstract]]本論文分為二大部分，第一部分研究利用射頻濺鍍製作氧化銦鎵鋅薄膜電晶體，藉由改變氧流量、總流量、電漿瓦數等參數進行鍍膜，以改善元件基本特性，第二部分為搭配氧化鋅製作雙主動層薄膜電晶體，以獲得最佳元件特性。 實驗結果顯示，製備氧化銦鎵鋅電晶體時，使用氧流量4-6%，總流量125sccm，電漿瓦數125W之條件將具有較小的臨界電壓，較大載子飄移率及較小次臨界擺幅。 在製作氧化鋅與氧化銦鎵鋅雙層薄膜電晶體時，在電漿瓦數125W時有較大的電流開關比，在退火溫度250度有最佳電晶體特性。[[abstract]]This thesis has two parts. First, the IGZO TFTs were fabricated by Pulsed-DC sputter deposition with different gas flow rate, oxygen ratio, and RF-power. Second, the double-layer TFTs were fabricated with IGZO and ZnO thin films. As results, for IGZO TFTs, the devices fabricated with oxygen ratio of 4-6%, total flow of 125 sccm, and RF-power of 125 W showed the lower threshold-voltage, higher mobility, higher On/Off current ratio, and lower sub-threshold swing than that of other samples. For IGZO/ZnO double-layer TFTs, the devices fabricated at RF-power of 125 W and with 250 oC annealing show better device performances than that of other samples.[[note]]碩