Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping
- Zhiou, S.
- Rodriguez, Philippe
- Gergaud, Patrice
- Nemouchi, Fabrice
- Nguyen, Thanh Tra
Publication date
May 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceWe studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature
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