International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER<; 10-9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could ...
We report on the properties of directly modulated active-passive integrated microring lasers fabrica...
International audienceHeterogeneous integration of III-V materials on silicon photonics circuits has...
We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Si...
International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction r...
International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction r...
International audienceError-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data ...
International audienceError-free 20-Gb/s directly-modulated transmission is achieved by enhancing th...
International audienceWe demonstrate error-free performance of an MRR filtered DML on the SOI platfo...
International audienceA hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabrica...
International audienceA hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabrica...
International audienceIn this paper, the 200mm silicon-on-insulator (SOI) platform is used to demons...
International audienceThe future technology migration in access networks compels the development of ...
International audienceWe report on a fully integrated hybrid III-V on a silicon distributed feedback...
International audienceWe report on a fully integrated hybrid III-V on a silicon distributed feedback...
We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bondin...
We report on the properties of directly modulated active-passive integrated microring lasers fabrica...
International audienceHeterogeneous integration of III-V materials on silicon photonics circuits has...
We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Si...
International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction r...
International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction r...
International audienceError-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data ...
International audienceError-free 20-Gb/s directly-modulated transmission is achieved by enhancing th...
International audienceWe demonstrate error-free performance of an MRR filtered DML on the SOI platfo...
International audienceA hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabrica...
International audienceA hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabrica...
International audienceIn this paper, the 200mm silicon-on-insulator (SOI) platform is used to demons...
International audienceThe future technology migration in access networks compels the development of ...
International audienceWe report on a fully integrated hybrid III-V on a silicon distributed feedback...
International audienceWe report on a fully integrated hybrid III-V on a silicon distributed feedback...
We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bondin...
We report on the properties of directly modulated active-passive integrated microring lasers fabrica...
International audienceHeterogeneous integration of III-V materials on silicon photonics circuits has...
We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Si...