International audienceWe demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics
This talk aims to provide an overview of our work on HgTe-based devices that show various aspect of ...
In this thesis, a number of transport effects in topological insulator nanostructures are investigat...
We investigated electron and hole transport in a three-dimensional topological insulator based on a ...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epi...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
Topological insulators can be seen as band-insulators with a conducting surface. The surface carrier...
This talk aims to provide an overview of our work on HgTe-based devices that show various aspect of ...
In this thesis, a number of transport effects in topological insulator nanostructures are investigat...
We investigated electron and hole transport in a three-dimensional topological insulator based on a ...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
International audienceWe demonstrate evidences of electronic transport via topological Dirac surface...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epi...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
Topological insulators can be seen as band-insulators with a conducting surface. The surface carrier...
This talk aims to provide an overview of our work on HgTe-based devices that show various aspect of ...
In this thesis, a number of transport effects in topological insulator nanostructures are investigat...
We investigated electron and hole transport in a three-dimensional topological insulator based on a ...