Electron microscopy analysis of microstructure of postannealed aluminum nitride template
- Kaur, J.
- Kuwano, N.
- Jamaludin, K. R.
- Mitsuhara, M.
- Saito, H.
- Hata, S.
- Suzuki, S.
- Miyake, H.
- Hiramatsu, K.
- Fukuyama, H.
Publication date
January 2016
DOI Publisher
Japan Society of Applied Physics ISSN
1882-0778Abstract
The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure
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