Design of a high-speed germanium-tin absorption modulator at mid-infrared wavelengths
- Ponce, R
- Sharif-Azadeh, S
- Stange, D
- Merget, F
- Marzban, B
- Ikonic, Z
- Buca, D
- Witzens, J
Publication date
October 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of the Franz-Keldysh-effect by confinement of the applied electric field to GeSn in a reverse-biased junction results in 3.2dB insertion losses, a 35GHz bandwidth and a 6dB extinction ratio for a 2Vpp drive signal
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