Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors
- Gallacher, Kevin
- Millar, Ross W.
- Giliberti, Valeria
- Calandrini, Eugenio
- Baldassarre, Leonetta
- Frigerio, Jacopo
- Ballabio, Andrea
- Sakat, Emilie
- Pellegrini, Giovanni
- Isella, Giovanni
- Ortolani, Michele
- Biagioni, Paolo
- Paul, Douglas J.
Publication date
January 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor
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