International audienceThe scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of CMOS transistors, heat dissipation effects limit the density and speed of current systems-on-chip. For beyond CMOS systems, the emerging memory technology STT-MRAM is seen as a promising alternative solution. This paper shows first how STT-MRAM can improve energy efficiency and reliability of future embedded systems. Then, a hybrid design exploration framework is presented to investigate the potential of STT-MRAM for high performance computing
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for...
International audienceSince the advent of complementary metal oxide semiconductors (CMOS), the numbe...
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current i...
International audienceMemories are currently a real bottleneck to design high speed and energy-effic...
National audienceThe complexity of embedded devices increases as today's applications request always...
STT-MRAM has long been a promising non-volatile memory solution for the embedded application space o...
As the current primary memory technology is reaching its limits, it is essential to explore alternat...
International audienceThe most widely used embedded memory technology, SRAM (Static Random Access Me...
STT-MRAM is an emerging non-volatile memory quickly approaching DRAM in terms of capacity, frequency...
International audienceThis paper deals with a new MRAM technology whose writing scheme relies on the...
International audienceThis paper deals with a new MRAM technology whose writing scheme relies on the...
High memory latency and limited memory bandwidth have proven to be the biggest problems for the perf...
International audienceIt has become increasingly challenging to respect Moore's well-known law in re...
Thesis (Ph. D.)--University of Rochester. Department of Electrical and Computer Engineering, 2015.As...
Avec la réduction continue des dimensions des transistors CMOS, le développement des mémoires statiq...
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for...
International audienceSince the advent of complementary metal oxide semiconductors (CMOS), the numbe...
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current i...
International audienceMemories are currently a real bottleneck to design high speed and energy-effic...
National audienceThe complexity of embedded devices increases as today's applications request always...
STT-MRAM has long been a promising non-volatile memory solution for the embedded application space o...
As the current primary memory technology is reaching its limits, it is essential to explore alternat...
International audienceThe most widely used embedded memory technology, SRAM (Static Random Access Me...
STT-MRAM is an emerging non-volatile memory quickly approaching DRAM in terms of capacity, frequency...
International audienceThis paper deals with a new MRAM technology whose writing scheme relies on the...
International audienceThis paper deals with a new MRAM technology whose writing scheme relies on the...
High memory latency and limited memory bandwidth have proven to be the biggest problems for the perf...
International audienceIt has become increasingly challenging to respect Moore's well-known law in re...
Thesis (Ph. D.)--University of Rochester. Department of Electrical and Computer Engineering, 2015.As...
Avec la réduction continue des dimensions des transistors CMOS, le développement des mémoires statiq...
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for...
International audienceSince the advent of complementary metal oxide semiconductors (CMOS), the numbe...
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current i...