Add to ORKGWe characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination
Abstract The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured ...
We investigated optimized growth parameters and annealing conditions for high-quality a-plane ZnO gr...
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented po...
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers different...
The temperature dependence of the band structure of ZnO has been studied on epitaxial films and bulk...
Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has b...
Photoluminescence (PL) spectroscopy and associated techniques are used to investigate the optical pr...
[[abstract]]Optical and electrical properties of undoped ZnO films were investigated in this study. ...
In this thesis, we study electrical and optical properties of ZnO single crystals, by processing mea...
[[abstract]]High-quality ZnO epitaxial films were grown by pulsed-laser deposition on Si (1 1 1) sub...
The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure ...
We report here the synthesis of ZnO films by the pulsed-laser deposition technique using various nov...
Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulse...
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented po...
ZnO shows a number of similarities with other wide gap semiconductor materials as, e.g., GaN as far ...
Abstract The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured ...
We investigated optimized growth parameters and annealing conditions for high-quality a-plane ZnO gr...
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented po...
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers different...
The temperature dependence of the band structure of ZnO has been studied on epitaxial films and bulk...
Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has b...
Photoluminescence (PL) spectroscopy and associated techniques are used to investigate the optical pr...
[[abstract]]Optical and electrical properties of undoped ZnO films were investigated in this study. ...
In this thesis, we study electrical and optical properties of ZnO single crystals, by processing mea...
[[abstract]]High-quality ZnO epitaxial films were grown by pulsed-laser deposition on Si (1 1 1) sub...
The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure ...
We report here the synthesis of ZnO films by the pulsed-laser deposition technique using various nov...
Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulse...
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented po...
ZnO shows a number of similarities with other wide gap semiconductor materials as, e.g., GaN as far ...
Abstract The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured ...
We investigated optimized growth parameters and annealing conditions for high-quality a-plane ZnO gr...
We report the results of photoluminescence and reflectance measurements on highly c-axis oriented po...