The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te crystal using laser radiation. Pulsed Nd:YAG laser for this aim was used. Estimation of the crystalline lattice defects before and after irradiation by γ-ray using photoluminescence method in the experiments was applied. Experimental results showed the increase of the radiation hardness of CdZnTe crystal after irradiation by laser at intensity 1.20-1.80 MW/cm2
A change of optical properties and surface topography of Cd1-xZnxTe crystal surface was observed aft...
CdZnTe crystal is considered to be an excellent material for many applications. It is used for room ...
Self-organizing nanometer size structures are observed on the surface of Cd0.9Zn0.1Te crystal irradi...
The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te ...
The possibility to increase the radiation hardness of Cd0:9Zn0:1Te crystal using pulsed Nd:YAG laser...
Radiation damage occured in semiconductors devices during their operation and it impairds the abilit...
Decrease of - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of...
Cadmium zinc telluride (CdZnTe) is a direct band gap semiconductor, it is used in a variety of appli...
The improvement of CdZnTe:In crystal quality using 1064 nm Nd:YAG laser radiation has been shown. Th...
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) semiconductor crystals have been shown ...
One of the most promising materials for X-ray and gamma ray detectors are cadmium telluride (CdTe), ...
Since crystalline Cd1-xZnxTe is widely used in radiation techniques to produce X-ray, -ray, and oth...
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductor crystal has been...
The aim of this work is to study the possibility to improve of CdZnTe radiation detector parameters ...
In this paper we present a study on the enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG...
A change of optical properties and surface topography of Cd1-xZnxTe crystal surface was observed aft...
CdZnTe crystal is considered to be an excellent material for many applications. It is used for room ...
Self-organizing nanometer size structures are observed on the surface of Cd0.9Zn0.1Te crystal irradi...
The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te ...
The possibility to increase the radiation hardness of Cd0:9Zn0:1Te crystal using pulsed Nd:YAG laser...
Radiation damage occured in semiconductors devices during their operation and it impairds the abilit...
Decrease of - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of...
Cadmium zinc telluride (CdZnTe) is a direct band gap semiconductor, it is used in a variety of appli...
The improvement of CdZnTe:In crystal quality using 1064 nm Nd:YAG laser radiation has been shown. Th...
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) semiconductor crystals have been shown ...
One of the most promising materials for X-ray and gamma ray detectors are cadmium telluride (CdTe), ...
Since crystalline Cd1-xZnxTe is widely used in radiation techniques to produce X-ray, -ray, and oth...
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductor crystal has been...
The aim of this work is to study the possibility to improve of CdZnTe radiation detector parameters ...
In this paper we present a study on the enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG...
A change of optical properties and surface topography of Cd1-xZnxTe crystal surface was observed aft...
CdZnTe crystal is considered to be an excellent material for many applications. It is used for room ...
Self-organizing nanometer size structures are observed on the surface of Cd0.9Zn0.1Te crystal irradi...