Add to ORKGSelf-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser radiation (LR) at intensities within 4 - 12 MW/cm2. The effect of exciton quantum confinement manifested by a shift to higher energies of the A0,X exciton band of the photoluminescent spectrum is present in structures of 10 – 15 nm in diameter at the top of nano-hills. A graded band gap structure with optical window is formed at the top of nano-hills
The aim of this work is to study the mechanism of nanohills growth in SiGe/Si structure by laser rad...
Decrease of - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of...
The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te ...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
The investigation of surface morphology using atomic force microscope has shown self-organizing of t...
Self-organizing nanometer size structures are observed on the surface of CdZnTe crystal irradiated b...
Self-organizing nanometer size structures are observed on the surface of Cd0.9Zn0.1Te crystal irradi...
Nanocones’ formation on a surface of CdxZn1-xTe solid solution with x=0.1 after irradiation by stron...
A change of optical properties and surface topography of Cd1-xZnxTe crystal surface was observed aft...
On the basis of analysis of experimental results, a two-stage mechanism of nanocones formation on th...
A mechanism of formation of graded band-gap based on thermogradient effect (TGE) is proposed in Cd1−...
According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the tempera-tur...
Cadmium zinc telluride (CdZnTe) is a direct band gap semiconductor, it is used in a variety of appli...
The aim of this work is to study the mechanism of nanohills growth in SiGe/Si structure by laser rad...
Decrease of - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of...
The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te ...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiate...
The investigation of surface morphology using atomic force microscope has shown self-organizing of t...
Self-organizing nanometer size structures are observed on the surface of CdZnTe crystal irradiated b...
Self-organizing nanometer size structures are observed on the surface of Cd0.9Zn0.1Te crystal irradi...
Nanocones’ formation on a surface of CdxZn1-xTe solid solution with x=0.1 after irradiation by stron...
A change of optical properties and surface topography of Cd1-xZnxTe crystal surface was observed aft...
On the basis of analysis of experimental results, a two-stage mechanism of nanocones formation on th...
A mechanism of formation of graded band-gap based on thermogradient effect (TGE) is proposed in Cd1−...
According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the tempera-tur...
Cadmium zinc telluride (CdZnTe) is a direct band gap semiconductor, it is used in a variety of appli...
The aim of this work is to study the mechanism of nanohills growth in SiGe/Si structure by laser rad...
Decrease of - radiation influence on intensity of A0X exiton band in photoluminescence spectrum of...
The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te ...