Carrier transport properties in the vicinity of single seld-assembled quantum dots determined by low-voltage cathodoluminescence imaging

Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements are performed on diluted InAs/InP QDs in order to spatially resolve them on CL images at temperature ranging from 5 to 300 K. The mean ambipolar diffusion length extracted from CL intensity profiles across different isolated bright spots is about 300 nm at 300 K. This gives an ambipolar carrier mobility of about 110 cm2/(V s)110 cm2/(V s). Temperature investigation reveals a maximum diffusion length near 120 K