We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability. © 2005 The American Physical Society
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field ...
A novel experimental setup has been realized to measure weak magnetic moments which can be modulated...
In the recent years the spectroscopy of spin noise has won its spurs for spin dynamics related studi...
In this Letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced e...
We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in s...
We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure...
We have measured the electron-spin-relaxation rate and the integrated spin noise power in n-doped Ga...
Possible utilization of the electron spin as an information carrier in electronic devices is an enga...
This article gives an overview on the advance of spin noise spectroscopy (SNS) in semiconductors in ...
Possible utilization of the electron spin as an information carrier in electronic devices is an enga...
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of se...
We investigate the electron spin dephasing in low n-doped GaAs semiconductor bulks driven by a corr...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field ...
A novel experimental setup has been realized to measure weak magnetic moments which can be modulated...
In the recent years the spectroscopy of spin noise has won its spurs for spin dynamics related studi...
In this Letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced e...
We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in s...
We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure...
We have measured the electron-spin-relaxation rate and the integrated spin noise power in n-doped Ga...
Possible utilization of the electron spin as an information carrier in electronic devices is an enga...
This article gives an overview on the advance of spin noise spectroscopy (SNS) in semiconductors in ...
Possible utilization of the electron spin as an information carrier in electronic devices is an enga...
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of se...
We investigate the electron spin dephasing in low n-doped GaAs semiconductor bulks driven by a corr...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor b...
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field ...
A novel experimental setup has been realized to measure weak magnetic moments which can be modulated...
In the recent years the spectroscopy of spin noise has won its spurs for spin dynamics related studi...
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