Contains fulltext : 178177.pdf (preprint version ) (Open Access)6 p
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We determine the band offsets in amorphous crystalline silicon [a Si H c Si 111 ] heterojunctions us...
The band offsets between crystalline and hydrogenated amorphous silicon (a-Si: H) are key parameters...
The band offsets between crystalline and hydrogenated amorphous silicon (a−Si∶H) are key parameters ...
The mechanism determining the band alignment of amorphous/crystalline Si heterostructures is address...
The crystalline-Si/amorphous-SiO2 (c-Si/a-SiO2) interface is an important system used in many applic...
We present an investigation of the band offsets in amorphous crystalline silicon heterojunctions a ...
We use the density functional theory/local-density approximation (DFT/LDA)-1/2 method [L. G. Ferreir...
Contains fulltext : 75476.pdf (publisher's version ) (Open Access
In this paper we present the results of empirical potential and density functional theory (DFT) stud...
Hybrid inorganic–organic semiconductor (HIOS) interfaces are of interest for new photovoltaic device...
We use capacitance techniques to directly measure the Fermi level at the crystalline/amorphous inter...
We conduct a systematic investigation of the valence band offset DEv for amorphous crystalline silic...
Incorporation of a similar to 1-nm-thick SiOx interlayer is found to have little effect on the band ...
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We determine the band offsets in amorphous crystalline silicon [a Si H c Si 111 ] heterojunctions us...
The band offsets between crystalline and hydrogenated amorphous silicon (a-Si: H) are key parameters...
The band offsets between crystalline and hydrogenated amorphous silicon (a−Si∶H) are key parameters ...
The mechanism determining the band alignment of amorphous/crystalline Si heterostructures is address...
The crystalline-Si/amorphous-SiO2 (c-Si/a-SiO2) interface is an important system used in many applic...
We present an investigation of the band offsets in amorphous crystalline silicon heterojunctions a ...
We use the density functional theory/local-density approximation (DFT/LDA)-1/2 method [L. G. Ferreir...
Contains fulltext : 75476.pdf (publisher's version ) (Open Access
In this paper we present the results of empirical potential and density functional theory (DFT) stud...
Hybrid inorganic–organic semiconductor (HIOS) interfaces are of interest for new photovoltaic device...
We use capacitance techniques to directly measure the Fermi level at the crystalline/amorphous inter...
We conduct a systematic investigation of the valence band offset DEv for amorphous crystalline silic...
Incorporation of a similar to 1-nm-thick SiOx interlayer is found to have little effect on the band ...
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to comp...
We determine the band offsets in amorphous crystalline silicon [a Si H c Si 111 ] heterojunctions us...
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