This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAMfor two planar bulk technologies. This study ismotivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. Amodelling methodology dedicated to this newphenomenon is proposed. Thismodelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability
International audienceThis work investigates the effects of aging and voltage scaling in neutron-ind...
IEEE International Electron Devices Meeting (IEDM), Washington, DC, DEC 09-11, 2013International aud...
As technology scales deep in submicron regime, CMOS SRAM memories have become increasingly sensitive...
Abstract — As dimensions of MOS devices have been scaled down, new reliability problems are coming i...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
International audienceThis work investigates the effects of aging and voltage scaling in neutron-ind...
As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radi...
UnrestrictedWith aggressive technology scaling, radiation-induced soft errors have become a major th...
L’électronique embarquée dans l’aéronautique, couramment appelé avionique, est chargée d’effectuer d...
An increasing amount of critical applications use DRAM as main memory in its computing systems. It i...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
The digital technology in the nanoelectronic era is based on intensive data processing and battery-b...
© 2018 Elsevier Ltd This paper proposes an appropriate method to estimate and mitigate the impact of...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resil...
International audienceThis work investigates the effects of aging and voltage scaling in neutron-ind...
IEEE International Electron Devices Meeting (IEDM), Washington, DC, DEC 09-11, 2013International aud...
As technology scales deep in submicron regime, CMOS SRAM memories have become increasingly sensitive...
Abstract — As dimensions of MOS devices have been scaled down, new reliability problems are coming i...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
International audienceThis work investigates the effects of aging and voltage scaling in neutron-ind...
As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radi...
UnrestrictedWith aggressive technology scaling, radiation-induced soft errors have become a major th...
L’électronique embarquée dans l’aéronautique, couramment appelé avionique, est chargée d’effectuer d...
An increasing amount of critical applications use DRAM as main memory in its computing systems. It i...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
The digital technology in the nanoelectronic era is based on intensive data processing and battery-b...
© 2018 Elsevier Ltd This paper proposes an appropriate method to estimate and mitigate the impact of...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resil...
International audienceThis work investigates the effects of aging and voltage scaling in neutron-ind...
IEEE International Electron Devices Meeting (IEDM), Washington, DC, DEC 09-11, 2013International aud...
As technology scales deep in submicron regime, CMOS SRAM memories have become increasingly sensitive...