Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer

The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron–electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobility graphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm2/Vs at an electron carrier density of n=5.0×10^9 cm−2 at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices.