Add to ORKGIn this thesis, an experimental study is presented on the electronic properties in the ballistic transport regime and the quantum Hall (QH) regime. The starting point is a two-dimentsional electron gas (2DEG) defined in high quality inversion layers of silicon metal-oxide semiconductor field-effect transistors (Si-MOSFETs). ... Zie: Summary
As predicted by the International Roadmap for Semiconductors, III-V metal-oxide semiconductor field-...
We report on detailed room temperature and low temperature transport properties of double-gate Si MO...
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Tech...
his thesis contains the result of an experimental study on the transport properties of high quality ...
Among metallic systems, the two-dimensional electron gas (2DEG) is a class by itself. The reduced di...
Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the...
We evaluate the mobility of inversion layer electrons in silicon MOSFETs using a real-time Green's f...
We have fabricated high-mobility silicon metal-oxide-semiconductor field-effect transistors containi...
To assess possible improvements in the electronic performance of two-dimensional electron gases (2DE...
In this Thesis different aspects of band degree of freedom are explored in 2D electron transport and...
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Tech...
International audienceCarrier mobility in a semiconductor is one of the most important parameters fo...
As predicted by the International Roadmap for Semiconductors, III-V metal-oxide semiconductor field-...
We report on detailed room temperature and low temperature transport properties of double-gate Si MO...
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Tech...
his thesis contains the result of an experimental study on the transport properties of high quality ...
Among metallic systems, the two-dimensional electron gas (2DEG) is a class by itself. The reduced di...
Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the...
We evaluate the mobility of inversion layer electrons in silicon MOSFETs using a real-time Green's f...
We have fabricated high-mobility silicon metal-oxide-semiconductor field-effect transistors containi...
To assess possible improvements in the electronic performance of two-dimensional electron gases (2DE...
In this Thesis different aspects of band degree of freedom are explored in 2D electron transport and...
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Tech...
International audienceCarrier mobility in a semiconductor is one of the most important parameters fo...
As predicted by the International Roadmap for Semiconductors, III-V metal-oxide semiconductor field-...
We report on detailed room temperature and low temperature transport properties of double-gate Si MO...
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Tech...