Add to ORKGProton-implanted n-type Si wafers were annealed at 950 degrees C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silico...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantatio...
Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron...
A surface-region-purification-induced p-n junction, a puzzle discovered at Brookhaven National Labor...
Ultrashallow p(+)n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation in...
Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF ...
The low-temperature annealing kinetics of ion implanted silicon is a critical factor worthy of consi...
International audienceHydrogen ion implantations at an energy of 250keV and a dose of 3 x 10(16) cm(...
We review the principal mechanisms of deep-level defect formation after proton irradiation and subse...
This thesis details the design, fabrication, and characterization of a PN junction formed from p-typ...
A shallow silicided N+-P or P+-N junction with CoSi2 can be formed by driving the dopants, which are...
Positron annihilation spectroscopy has been used to study silicon nitride films grown by plasma-enha...
Absfract-In this study, it is demonstrated that the incor-poration of fluorine can enhance poly-SiSi...
Aluminum is used as a p-type dopant in the manufac-ture of high voltage power semiconductor devices,...
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silico...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantatio...
Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron...
A surface-region-purification-induced p-n junction, a puzzle discovered at Brookhaven National Labor...
Ultrashallow p(+)n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation in...
Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF ...
The low-temperature annealing kinetics of ion implanted silicon is a critical factor worthy of consi...
International audienceHydrogen ion implantations at an energy of 250keV and a dose of 3 x 10(16) cm(...
We review the principal mechanisms of deep-level defect formation after proton irradiation and subse...
This thesis details the design, fabrication, and characterization of a PN junction formed from p-typ...
A shallow silicided N+-P or P+-N junction with CoSi2 can be formed by driving the dopants, which are...
Positron annihilation spectroscopy has been used to study silicon nitride films grown by plasma-enha...
Absfract-In this study, it is demonstrated that the incor-poration of fluorine can enhance poly-SiSi...
Aluminum is used as a p-type dopant in the manufac-ture of high voltage power semiconductor devices,...
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silico...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantatio...