Add to ORKGA low-temperature Si0.8Ge0.2 (LT-Si0.8Ge0.2) interlayer was grown at 500 degrees C to improve the relaxed Si0.8Ge0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (RHEED) pattern from spotty to streaky and etch pits counts. For the same extent of strain; the threading dislocation density was reduced from 8 x 10(7) cm(-2) in the latter to 2 x 10(6) cm(-2) in the former. (C) 2000 Elsevier Science B.V. All rights reserved
Several types of buffer layer structures, including superlattice and step-graded layers, have been e...
TEM was u~ed to observe lattice defects in Si0.7~Ge0.2 ~ islands and in the film subsequently g rown...
International audienceThick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers...
In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a ...
We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the tot...
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 ...
Relaxed graded Si-Ge/Si layers can be used in a variety of micro-electronics applications such as te...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temper...
After a long period of developing integrated circuit technology through simple scaling of silicon de...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1...
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combina...
The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surf...
Several types of buffer layer structures, including superlattice and step-graded layers, have been e...
TEM was u~ed to observe lattice defects in Si0.7~Ge0.2 ~ islands and in the film subsequently g rown...
International audienceThick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers...
In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a ...
We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the tot...
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 ...
Relaxed graded Si-Ge/Si layers can be used in a variety of micro-electronics applications such as te...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temper...
After a long period of developing integrated circuit technology through simple scaling of silicon de...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1...
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combina...
The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surf...
Several types of buffer layer structures, including superlattice and step-graded layers, have been e...
TEM was u~ed to observe lattice defects in Si0.7~Ge0.2 ~ islands and in the film subsequently g rown...
International audienceThick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers...