Add to ORKGHomoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the s...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualiti...
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor ...
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by us...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reacto...
High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a ve...
The growth of thick epitaxial 4H-SiC layers with low defect density is an essential step for the fab...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
International audience4H-SiC epilayers have been achieved by cold wall CVD in the silane-propane sys...
4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wal...
In situ H2 etching and homoepitaxial growth of 4H-SiC have been carried out on 4 ◦ off-axis Si-face ...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the s...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualiti...
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor ...
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by us...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reacto...
High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a ve...
The growth of thick epitaxial 4H-SiC layers with low defect density is an essential step for the fab...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
International audience4H-SiC epilayers have been achieved by cold wall CVD in the silane-propane sys...
4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wal...
In situ H2 etching and homoepitaxial growth of 4H-SiC have been carried out on 4 ◦ off-axis Si-face ...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the s...