International audienceFuture integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance . A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite , it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3 /ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of −60 ppm/V2 associated with a density of 11.5 fF/ m2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors
During DRAM capacitor scaling a lot of effort was spent searching for new material stacks to overcom...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
International audienceFuture integration of metal-insulator-metal capacitors requires devices with h...
[[abstract]]We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A...
[[abstract]]The metal-insulator-metal (MIM) capacitor for analog and rf applications has been develo...
The effect of the deposition temp. and layer thickness on the phys. and elec. properties of ZrO2-bas...
ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-in...
We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insu...
Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-Z...
Graduation date:2017Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a...
[[abstract]]We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which ...
A high performance metal-insulator-metal (MIM) capacitor with Ba(1-x)SrxTiO3 (BST) films deposited a...
During DRAM capacitor scaling a lot of effort was spent searching for new material stacks to overcom...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
International audienceFuture integration of metal-insulator-metal capacitors requires devices with h...
[[abstract]]We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A...
[[abstract]]The metal-insulator-metal (MIM) capacitor for analog and rf applications has been develo...
The effect of the deposition temp. and layer thickness on the phys. and elec. properties of ZrO2-bas...
ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-in...
We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insu...
Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-Z...
Graduation date:2017Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a...
[[abstract]]We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which ...
A high performance metal-insulator-metal (MIM) capacitor with Ba(1-x)SrxTiO3 (BST) films deposited a...
During DRAM capacitor scaling a lot of effort was spent searching for new material stacks to overcom...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...